ISSTT Proceedings

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Superlattice Electronic Devices as Compact Terahertz Sources

Authors:
H. Eisele, S. P. Khanna, E.H. Linfield
Abstract:
Negative differential resistance devices were fabricated from four epitaxial wafers with different GaAs/AlAs superlattices and evaluated in resonant-cap full-height WR-15 and WR-10 waveguide cavities. These devices on integral heat sinks generated output powers in the fundamental mode between 62–108 GHz. The best RF powers (and their corresponding dc-to-RF conversion efficiencies) were 58 mW (3.5%) at 66 GHz, 42 mW (2.6%) at 78 GHz, and 28 mW (1.8%) at 94 GHz. The RF power of 15 mW at 101 GHz constitutes a 30-fold improvement over previous results; the highest fundamental oscillation frequency was 108 GHz. In a second-harmonic mode, one device yielded 2.0 mW at 216 GHz, the highest second-harmonic frequency to date for a aAs/AlAs superlattice.
Categories:
Sources
Year:
2010
Session:
2
Full-text:
Download a PDF of this paper.
Page Number(s):
60-63