ISSTT Proceedings

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A 530-600 GHz Silicon Micro-machined Integrated Receiver Using GaAs MMIC Membrane Planar Schottky Diodes

Authors:
B. Thomas, C. Lee, A. Peralta, J. Gill, G. Chattopadhyay, S. Sin, R. Lin, I. Mehdi
Abstract:
We present here a novel integrated receiver architecture called Radiometer-On-a-Chip (ROC) that uses a combination of MMIC amplifier, GaAs Schottky multiplier and mixer devices and silicon micro-machining techniques. The novel stacking of micro-machined silicon wafers allows for the 3-dimensional integration of the W-band power amplifier, a 280 GHz tripler and a 560 GHz sub-harmonic mixer in an extremely compact package. Preliminary results give a DSB mixer noise temperature of 4860 K and DSB mixer conversion losses of 12.15 dB at 542 GHz. Instantaneous 3 dB RF bandwidth extends from 525 to 585 GHz. To the authors' knowledge, this is the first demonstration of an all integrated silicon micro-machined receiver front-end at these frequencies.
Categories:
Mixers, Schottky Devices
Year:
2010
Session:
6
Full-text:
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Page Number(s):
161-164