ISSTT Proceedings

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Electro-thermal Model for the Design of Schottky Diode Based Circuits

Authors:
J. Grajal, C.-G. Pérez, B. Mencía
Abstract:
The planar GaAs Schottky diode frequency multiplier is a critical component for the local oscillator for submillimeter wave heterodyne receivers. They provide low mass, electronic tunability, broad bandwidth, long life time, and room temperature operation. The use of a W-band (75GHz – 110 GHz) power amplifier followed by one or more frequency multipliers is the most common implementation of submillimeter-wave sources from 200 GHz to 2000 GHz. Recently, W-band GaN-based MMIC power amplifiers and power-combined GaAs power amplifiers have provided the possibility of generating watt level powers at W-band. As more power at W-band is available to the multipliers, the power handling capability of multipliers becomes more important. High operating temperature due to the high input power leads to degradation of conversion efficiency.
Categories:
Mixers, Schottky Devices
Year:
2010
Session:
6
Full-text:
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Page Number(s):
165