ISSTT Proceedings

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Steady-State and Transient Thermal Analysis of High-Power Planar Schottky Diodes

Authors:
A. Y. Tang, E. Schlecht, G. Chattopadhyay, R. Lin, C. Lee, J. Gill, I. Mehdi, and J. Stake
Abstract:
In this paper, we present the thermal analysis of high frequency planar Schottky diode based multiplier chips, for high power applications. In order to optimize the thermal characteristic of the multiplier chip, several chip layout and fabrication options are explored. Both the steady-state and transient thermal characteristic of a multiplier chip are analyzed by solving the heat equation via the 3D finite element method, taking into account the temperature-dependent material properties. The result shows that the multiplier chips exhibit thermal resistances in the order of 103 K/W and thermal time-constants in the order of milliseconds. The analysis also indicates that bonding agents with a better thermal conductivity is required in order to fully exploit benefits of the heat spreader. On the other hand, a GaN-on-Si-based multiplier chip demonstrates a better thermal handling capability compared to the GaAs-based chip. Experimental verification of the simulation result is performed using IR microscopy, showing a reasonable match of the measured and simulated result. The transient characteristic of the measured junction temperature is modeled by two time-constants, i.e. 11 and 3.3 ms.
Categories:
Sources
Year:
2011
Session:
3
Full-text:
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Page Number(s):
32-38